Quantum Emitter Formation Dynamics and Probing of Radiation-Induced Atomic Disorder in Silicon

Near-infrared color centers in silicon are emerging candidates for on-chip integrated quantum emitters, optical-access memories, and sensing. We access ensemble G-color-center formation dynamics radiation-induced atomic disorder a series of megaelectronvolt proton-flux conditions. The photoluminescence results reveal that the G formed more efficiently by pulsed-proton irradiation than continuous-wave proton irradiation. enhanced transient excitations dynamic annealing within nanoseconds allows optimization ratio G-center to nonradiative defect accumulation. preserve narrow line widths about 0.1 nm when they generated moderate fluences, while width broadens significantly as fluence increases. This implies vacancy or interstitial clustering overlapping collision cascades. tracking properties conditions enables sensitive probing disorder, serving complementary analytical method sensing damage Aided ab initio electronic structure calculations, we provide insight into induced inhomogeneous broadening introducing vacancies, interstitials, oriented strain fields vicinity center. A leads tensile can result either red shift blue emission, depending on its position relative Meanwhile, $\mathrm{Si}$ interstitials lead compressive strain, which monotonic shift. High-flux tunable ion pulses enable exploration fundamental defects well methods qubit synthesis information processing.